Title:
OXIDE SINTERED BODY, AND SPUTTERING TARGET COMPRISING THE OXIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2016/152349
Kind Code:
A1
Abstract:
This oxide sintered body comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, and is an IGZO sintered body characterized by having an average length of cracks existing in the sintered body not smaller than 3 µm but not larger than 15 µm. The present invention addresses the problem of providing a sputtering target that enables forming of excellent thin films by reducing the occurrence of cracking in the target and reducing generation of particles when depositing is performed by DC sputtering.
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Inventors:
YAMAGUCHI YOHEI (JP)
KAKUTA KOJI (JP)
KAKUTA KOJI (JP)
Application Number:
PCT/JP2016/054839
Publication Date:
September 29, 2016
Filing Date:
February 19, 2016
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C04B35/00; C23C14/34
Domestic Patent References:
| WO2009148154A1 | 2009-12-10 |
Foreign References:
| JP2008163441A | 2008-07-17 | |||
| JP2003183820A | 2003-07-03 | |||
| JP2015024944A | 2015-02-05 |
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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