Title:
OXIDE SPUTTERED FILM, METHOD FOR MANUFACTURING OXIDE SPUTTERED FILM, OXIDE SINTERED COMPACT, AND TRANSPARENT RESIN SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/150821
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an oxide sputtered film having excellent transparency and good water vapor barrier performance and oxygen barrier performance in high-mass-productivity direct-current sputtering, a method for manufacturing an oxide sputtered film, an oxide sintered compact, and a transparent resin substrate. An oxide sputtered film which contains Zn and Sn, is amorphous and transparent, and has water vapor barrier performance or oxygen barrier performance, the oxide sputtered film being characterized in that the ratio Sn/(Zn + Sn) of the number of metal atoms of Zn and Sn therein is 0.18 to 0.29.
Inventors:
KUWAHARA MASAKAZU (JP)
NITO SHIGEO (JP)
NITO SHIGEO (JP)
Application Number:
PCT/JP2018/046947
Publication Date:
August 08, 2019
Filing Date:
December 20, 2018
Export Citation:
Assignee:
SUMITOMO METAL MINING CO (JP)
International Classes:
C23C14/08; C04B35/457; C23C14/34
Domestic Patent References:
| WO2018207414A1 | 2018-11-15 |
Foreign References:
| JP2007277075A | 2007-10-25 | |||
| JP2013036073A | 2013-02-21 | |||
| JP2017145185A | 2017-08-24 |
Attorney, Agent or Firm:
KOIKE Akira et al. (JP)
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