Title:
P-N JUNCTION-TYPE COMPOUD SEMICONDUCTOR LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2005/109531
Kind Code:
A1
Abstract:
In a p-n junction-type compound semiconductor light-emitting diode provided on a crystal substrate with at least an n-type active layer formed of a Group III nitride semiconductor as a light emitting layer, and with a Group III nitride semiconductor layer containing a p-type impurity on the n-type active layer, the diode has a boron phosphide-based Group III-V compound semiconductor layer possessing a band gap exceeding that of the Group III nitride semiconductor forming the n-type active layer at room temperature and exhibiting a p-type electroconductivity in an undoped state deposited on the p-type impurity-containing Group Ill nitride semiconductor layer, and has an ohmic positive electrode joined to a surface of the boron phosphide-based Group III-V compound semiconductor layer.
Inventors:
ODAWARA MICHIYA (JP)
UDAGAWA TAKASHI (JP)
UDAGAWA TAKASHI (JP)
Application Number:
PCT/JP2005/008735
Publication Date:
November 17, 2005
Filing Date:
May 06, 2005
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
ODAWARA MICHIYA (JP)
UDAGAWA TAKASHI (JP)
ODAWARA MICHIYA (JP)
UDAGAWA TAKASHI (JP)
International Classes:
H01L33/26; H01L33/32; H01S5/042; H01S5/30; H01S5/323; (IPC1-7): H01L33/00
Foreign References:
| JP2002232000A | 2002-08-16 | |||
| JP2003309284A | 2003-10-31 | |||
| JP2003022971A | 2003-01-24 |
Attorney, Agent or Firm:
Fukuda, Kenzo (6-13 Nihishinbashi 1-chom, Minato-ku Tokyo, JP)
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