Title:
P-TYPE GATE HEMT DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/127165
Kind Code:
A1
Abstract:
Disclosed in the present invention is a P-type gate HEMT device. The P-type gate HEMT device comprises a substrate, a buffer layer, a channel layer, and a barrier layer which are sequentially provided from bottom to top; a first P-type material layer is provided on the barrier layer, and a first source and a first drain are provided on two sides of the first P-type material layer; a first conductive layer is provided on the first P-type material layer; a second P-type material layer is connected to the first P-type material layer; a second conductive layer is connected to the second P-type material layer; a third conductive layer is connected to the second P-type material layer; the first P-type material layer, the first source, the first drain, and the first conductive layer are used to form a normally-off N-channel transistor; the second P-type material layer, the second conductive layer, and the third conductive layer are used to form a normally-on P-channel transistor. By providing a normally-on P-channel transistor on the basis of a GaN HEMT, the threshold voltage and the regulation range thereof are increased, and threshold drift, caused by changes of the total amount of equivalent charges, in the P-type material layer in a gate region of the original P-type gate GaN HEMT is eliminated.
Inventors:
HUA MENGYUAN (CN)
CHEN JUNTING (CN)
CHEN JUNTING (CN)
Application Number:
PCT/CN2021/113215
Publication Date:
June 23, 2022
Filing Date:
August 18, 2021
Export Citation:
Assignee:
UNIV SOUTHERN SCI & TECH (CN)
International Classes:
H01L29/778; H01L29/06; H01L29/423
Foreign References:
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| CN105070752A | 2015-11-18 | |||
| CN111312815A | 2020-06-19 | |||
| CN105280694A | 2016-01-27 | |||
| US20170018639A1 | 2017-01-19 | |||
| US20190067465A1 | 2019-02-28 | |||
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| CN111916449A | 2020-11-10 |
Attorney, Agent or Firm:
JIAQUAN IP LAW (CN)
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