P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/160084

Kind Code:

A1

Abstract:

A manufacturing method for a P-type laterally diffused metal oxide semiconductor device, comprising: forming a N-type buried layer (220) in a substrate (210), forming a P-type region (230) located on the N-type buried layer (220), and forming a mask layer (240) located on the P-type region (230); patterning the mask layer (240) to form at least two injection windows (241, 243, 245); performing N-type ion implantation by means of the at least two injection windows (241, 243, 245), so as to form a high-voltage N-well doped region (231) and a low-voltage N-well doped region (233); forming an oxide layer (244); removing at least part of the mask layer (240); performing P-type ion implantation on the P-type region (230) to form a P-type doped region (234); by means of thermal annealing, diffusing the P-type doped region (234) to form a drift region (236) and two P-type well regions (238), diffusing the high-voltage N-well doped region (231) to form a high-voltage N-type well region (235), and diffusing the low-voltage N-well doped region (233) to form a low-voltage N-type well region (237); and forming a source doped region (252), a drain doped region (254), and a gate (260).

More Like This:

JP6159471	A silicon carbide semiconductor device and a manufacturing method for the same
WO/2022/188703	GATE RESISTANCE ADJUSTABLE SUPER-JUNCTION POWER DEVICE AND MANUFACTURING METHOD THEREFOR
JP2015005705	THIN FILM TRANSISTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

Inventors:

ZHANG LONG (CN)
HE NAILONG (CN)
CUI YONGJIU (CN)
ZHANG SEN (CN)
WANG XIAONA (CN)
LIN FENG (CN)
MA JIE (CN)
LIU SIYANG (CN)
SUN WEIFENG (CN)

Application Number:

PCT/CN2022/135331

Publication Date:

August 31, 2023

Filing Date:

November 30, 2022

Export Citation:

Click for automatic bibliography generation Help

Assignee:

UNIV SOUTHEAST (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)

International Classes:

H01L21/336; H01L29/78

Foreign References:

CN1976057A	2007-06-06
JP2012094797A	2012-05-17
CN111261718A	2020-06-09
CN103050536A	2013-04-17
CN103681862A	2014-03-26
CN113611733A	2021-11-05
CN106409676A	2017-02-15
CN113270423A	2021-08-17

Attorney, Agent or Firm:

ADVANCE CHINA IP LAW OFFICE (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: METHOD FOR EXECUTING TRANSACTIONS, BLOCKCHAIN, MASTER NODE, AND SLAVE NODE

Next Patent: METHOD FOR EXECUTING TRANSACTION, BLOCKCHAIN, MASTER NODE, AND SLAVE NODE