Title:
PARAMETER SEARCH METHOD
Document Type and Number:
WIPO Patent Application WO/2020/165688
Kind Code:
A1
Abstract:
The present invention provides semiconductor device parameter candidates. According to the present invention, a parameter extraction unit is given measured data as data sets, and extracts a model parameter. A circuit simulator is given a first netlist, performs simulation using the first netlist and the model parameter, and outputs a first output result. A classification model learns the model parameter and the first output result, and classifies the model parameter. The circuit simulator is given a second netlist and the model parameter. A neural network is given a variable desired to be adjusted, outputs an action value function, and updates the variable. The circuit simulator performs simulation using the second netlist and the model parameter, wherein if a second output result output from the circuit simulator does not satisfy a condition, the circuit simulator updates the weighting factors of the neural network, whereas if the second output result satisfies the condition, the circuit simulator determines the variable as an optimum candidate.
Inventors:
OGUNI TEPPEI (JP)
OSADA TAKESHI (JP)
FUKUTOME TAKAHIRO (JP)
OSADA TAKESHI (JP)
FUKUTOME TAKAHIRO (JP)
Application Number:
PCT/IB2020/050854
Publication Date:
August 20, 2020
Filing Date:
February 04, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G06N3/02; G06F30/27; G06F30/36; G06F30/367; G06N20/00; G06N99/00
Foreign References:
| JP2013020614A | 2013-01-31 |
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