PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION

Title:

PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION

Document Type and Number:

WIPO Patent Application WO2004053008

Kind Code:

A3

Abstract:

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

Inventors:

LIU JUN
WRSCHKA PETER
BERNHARD DAVID
KING MACKENZIE
DARSILLO MICHAEL
BOGGS KARL

Application Number:

PCT/US2003/038047

Publication Date:

September 02, 2004

Filing Date:

December 02, 2003

Export Citation:

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Assignee:

ADVANCED TECH MATERIALS (US)

International Classes:

C09G1/02; C23F3/00; C23F3/06; C23F11/14; H01L21/321; (IPC1-7): C09G1/02; C09G1/04

Foreign References:

US20010008828A1

2001-07-19

Other References: