Title:
PATTERN FORMATION METHOD, PATTERN, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS PROVIDED WITH ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR MANUFACTURING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING MOLD FOR NANOIMPRINT, AND MOLD FOR NANOIMPRINT
Document Type and Number:
WIPO Patent Application WO/2015/178375
Kind Code:
A1
Abstract:
Provided is a pattern formation method comprising: a step in which an active-ray-sensitive or radiation-sensitive film is formed by applying an active-ray-sensitive or radiation-sensitive resin composition to a substrate; a step in which the active-ray-sensitive or radiation-sensitive film is exposed; and a step in which the exposed active-ray-sensitive or radiation-sensitive film is developed after exposure using an alkali development solution. Provided is the pattern forming method, wherein the active-ray-sensitive or radiation-sensitive resin composition includes (A) a high-molecular-weight compound that contains repeated units expressed by formula (I), and the concentration of the alkali constituent in the alkali development solution is 1.25-2.2% by mass.
Inventors:
TSUBAKI HIDEAKI (JP)
TSUCHIHASHI TORU (JP)
TSUCHIHASHI TORU (JP)
Application Number:
PCT/JP2015/064322
Publication Date:
November 26, 2015
Filing Date:
May 19, 2015
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/32; B29C59/02; C08F12/24; G03F7/039
Foreign References:
| JP2004012511A | 2004-01-15 | |||
| JP2013044809A | 2013-03-04 | |||
| JPH07234511A | 1995-09-05 | |||
| JP2002169299A | 2002-06-14 | |||
| JP2013182191A | 2013-09-12 |
Attorney, Agent or Firm:
KURATA, Masatoshi et al. (JP)
Masatoshi Kurata (JP)
Masatoshi Kurata (JP)
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