PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION

WIPO Patent Application WO/2012/053527

A1

The objective of the present invention is to provide: a pattern-forming method that has superior lithographic properties of resolution, circularity, and the like, and suppresses the incidence of missing contact holes and roughness of the exposed surface after development; and a radiation-sensitive composition that is optimal in the pattern-forming method. The pattern-forming method contains (1) a step for forming a resist film on a substrate using the radiation-sensitive composition, (2) an exposure step, and (3) a development step, and is characterized by: the developing liquid in the development step (3) containing at least 80 mass% of an organic solvent; the radiation-sensitive composition containing [A] a polymer containing a structural unit having an acid-dissociating group, and [B] at least two components including a radiation-sensitive acid generator; and one of the components in the radiation-sensitive composition having a group represented by formula (1).

SAKAKIBARA HIROKAZU (JP)
HORI MASAFUMI (JP)
FURUKAWA TAIICHI (JP)
ITO KOJI (JP)

PCT/JP2011/073974

April 26, 2012

October 18, 2011

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JSR CORP (JP)
SAKAKIBARA HIROKAZU (JP)
HORI MASAFUMI (JP)
FURUKAWA TAIICHI (JP)
ITO KOJI (JP)

G03F7/004; C08F220/10; G03F7/038; G03F7/039; G03F7/32; H01L21/027

WO2008153109A1	2008-12-18
WO2010119910A1	2010-10-21

JP2008292975A	2008-12-04
JP2009211051A	2009-09-17
JP2011221513A	2011-11-04

AMANO KAZUNORI (JP)
Kazuki Amano (JP)

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