Title:
PATTERN MANUFACTURING METHOD AND PATTERNED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/065539
Kind Code:
A1
Abstract:
Provided in the present invention is a pattern manufacturing method, comprising: performing patterning processing on a photoresist thin film, so as to expose part of a top surface of a metal thin film to obtain an exposed metal top surface; then, processing the exposed metal top surface using an ion bombardment process, so as to form N metal hard mask strips in the photoresist thin film; after the photoresist thin film is removed, etching a hard mask and a target thin film in sequence by taking the N metal hard mask strips as masks; and taking a top surface of the target thin film as a stop position, so as to obtain a target pattern. Further provided in the present invention is a patterned substrate obtained using the pattern manufacturing method.
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Inventors:
KANG XIAOXU (CN)
ZHAO YUHANG (CN)
ZHAO YUHANG (CN)
Application Number:
PCT/CN2021/143854
Publication Date:
April 27, 2023
Filing Date:
December 31, 2021
Export Citation:
Assignee:
SHANGHAI IC R&D CT CO LTD (CN)
SHANGHAI INTEGRASHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO LTD (CN)
SHANGHAI INTEGRASHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO LTD (CN)
International Classes:
H01L21/033
Foreign References:
| CN104425222A | 2015-03-18 |
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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