Title:
PATTERNING METHOD FOR FILM LAYER AND PREPARATION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/169041
Kind Code:
A1
Abstract:
Provided in the present invention are a patterning method for a film layer and a preparation method for a semiconductor device. In the patterning method for a film layer, plasma surface treatment is performed on a portion, which needs to be reserved, in a thin-film material layer by means of a mask in a photoresist layer, such that the top surface of the portion is passivated to form a passivation layer, and the formed passivation layer can be used for protecting thin-film material below the passivation layer from being removed, thereby achieving a patterning effect of the film layer. By using the patterning method provided in the present invention, the problem of photoresist residues can be effectively ameliorated, defects caused by a patterning process are reduced, the process is simple, and further optimization of the patterning process is realized.
Inventors:
LI XIANG (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
Application Number:
PCT/CN2022/140333
Publication Date:
September 14, 2023
Filing Date:
December 20, 2022
Export Citation:
Assignee:
SEMICONDUCTOR MFG ELECTRONICS SHAOXING CORP (CN)
International Classes:
H01L21/02; H01L21/321; H01L21/04
Foreign References:
| CN114334642A | 2022-04-12 | |||
| CN106298556A | 2017-01-04 | |||
| CN112017946A | 2020-12-01 | |||
| CN1437237A | 2003-08-20 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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