Title:
PELLICLE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/080446
Kind Code:
A1
Abstract:
The disclosed pellicle manufacturing method of the present invention comprises: a silicon nitride layer formation step of forming a silicon nitride layer on each of the two sides of a wafer substrate; a nickel layer formation step of forming a nickel layer on one side of the silicon nitride layer formed on one side of the wafer substrate; an amorphous carbon layer formation step of forming an amorphous carbon layer on one side of the nickel layer; an interlayer exchange step of heating same at a first heat treatment temperature so that interlayer exchange occurs between the amorphous carbon layer and the nickel layer, thereby forming a graphene layer; a nickel layer aggregation step of heating same at a second heat treatment temperature so that the nickel layer aggregates, after the interlayer exchange step; and a hole formation step of forming a plurality of holes in the graphene layer in a hydrogen gas atmosphere, after the nickel layer aggregation step.
Inventors:
LEE GYU HYUN (KR)
KWON YOUNG DUCK (KR)
YOO BYONG WOOK (KR)
MOON SEUNG IL (KR)
MOON JONG TAIK (KR)
KIM KI SOO (KR)
LEE SANG MIN (KR)
KWON YOUNG DUCK (KR)
YOO BYONG WOOK (KR)
MOON SEUNG IL (KR)
MOON JONG TAIK (KR)
KIM KI SOO (KR)
LEE SANG MIN (KR)
Application Number:
PCT/KR2022/019629
Publication Date:
April 18, 2024
Filing Date:
December 05, 2022
Export Citation:
Assignee:
GRAPHENELAB CO LTD (KR)
International Classes:
G03F1/62; C01B32/184
Foreign References:
| KR20220006887A | 2022-01-18 | |||
| KR102282184B1 | 2021-07-28 | |||
| KR20200063945A | 2020-06-05 | |||
| KR20220113200A | 2022-08-12 | |||
| KR101355086B1 | 2014-01-27 | |||
| KR20180091729A | 2018-08-16 |
Attorney, Agent or Firm:
TAEDONG PATENT & LAW FIRM (KR)
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