PERPENDICULARLY MAGNETIZED MTJ DEVICE - ZHEJIANG HIKSTOR TECHNLOGY CO LTD

Title:

PERPENDICULARLY MAGNETIZED MTJ DEVICE

Document Type and Number:

WIPO Patent Application WO/2020/043020

Kind Code:

A1

Abstract:

A perpendicularly magnetized MTJ device, comprising: a thermal stabilization reinforcement layer (104), a free layer (103), a tunnel layer (102) and a fixation layer (101) that are subsequently stacked on top of one another, wherein the ratio of the thickness of the free layer (103) to the diameter of the MTJ device is 0.75 to 2; the thermal stabilization reinforcement layer (104) has phase transition properties, wherein the thermal stabilization reinforcement layer (104) is in an antiferromagnetic phase when the temperature is lower than a phase transition temperature and is in a ferromagnetic phase when the temperature is higher than the phase transition temperature. The present invention can reduce the write current of an STT-MRAM on the basis of an ultra-small diameter MTJ device.

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Inventors:

HE SHIKUN (CN)
GONG JUNLU (CN)

Application Number:

PCT/CN2019/102213

Publication Date:

March 05, 2020

Filing Date:

August 23, 2019

Export Citation:

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Assignee:

ZHEJIANG HIKSTOR TECHNLOGY CO LTD (CN)

International Classes:

H01L43/08

Foreign References:

CN103887426A	2014-06-25
CN1934652A	2007-03-21
CN101452991A	2009-06-10
CN1476109A	2004-02-18
US20120300542A1	2012-11-29

Attorney, Agent or Firm:

BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)

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