Title:
PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERISTICS AND PHASE-CHANGE MEMORY HAVING HIGHLY INTEGRATED THREE-DIMENSIONAL ARCHITECTURE USING SAME
Document Type and Number:
WIPO Patent Application WO/2018/225993
Kind Code:
A1
Abstract:
According to an embodiment, a phase-change memory device comprises: an upper electrode and a lower electrode; a phase-change layer in which a crystal state thereof is changed by heat supplied by the upper electrode and the lower electrode; and a selector which selectively switches the heat supplied by the upper electrode and the lower electrode to the phase-change layer, wherein the selector is formed of a compound which includes a transition metal in the phase-change material so as to have a high resistance when the crystalline state of the selector is crystalline and so as to have a low resistance when the crystalline state of the selector is non-crystalline.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2018/006317
Publication Date:
December 13, 2018
Filing Date:
June 01, 2018
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L45/00; G11C13/00
Foreign References:
| KR20090107320A | 2009-10-13 | |||
| KR20090009652A | 2009-01-23 | |||
| KR20120097634A | 2012-09-05 | |||
| KR101167551B1 | 2012-07-23 |
Other References:
KAU, DERCHANG ET AL.: "A Stackable Cross Point Phase Change Memory", 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM, 29 March 2010 (2010-03-29), pages 27.1.1 - 27.1.4, XP031644445
Attorney, Agent or Firm:
YANG, Sungbo (KR)
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