Title:
PHASE SHIFT MASK BLANK, MANUFACTURING METHOD THEREOF, AND PHASE SHIFT MASK
Document Type and Number:
WIPO Patent Application WO/2011/125337
Kind Code:
A1
Abstract:
Disclosed are a phase shift mask blank and a manufacturing method thereof capable of increasing the mask service life and of improving the resistance to light of an optical semitransparent film (a phase shift film) configured from a material having as main components nitrogen, silicon and a transition metal for exposure light of wavelength 200nm or less; also disclosed is the phase shift mask. The phase shift mask blank, which is used for creating phase shift masks suitable for ArF excimer laser exposure, is provided with an optical semi-transmissive film on a transparent substrate, wherein the optical semi-transmissive film is configured from an incomplete nitridation film having as main components nitrogen, silicon and a transition metal, and the content ratio of the transition metal to the transition metal and the silicon in the optical semi-transmissive film is less than 9%.
Inventors:
NOZAWA OSAMU (JP)
SHISHIDO HIROAKI (JP)
SAKAI KAZUYA (JP)
SHISHIDO HIROAKI (JP)
SAKAI KAZUYA (JP)
Application Number:
PCT/JP2011/002090
Publication Date:
October 13, 2011
Filing Date:
April 08, 2011
Export Citation:
Assignee:
HOYA CORP (JP)
NOZAWA OSAMU (JP)
SHISHIDO HIROAKI (JP)
SAKAI KAZUYA (JP)
NOZAWA OSAMU (JP)
SHISHIDO HIROAKI (JP)
SAKAI KAZUYA (JP)
International Classes:
C23C14/06; G03F1/32; G03F1/54
Foreign References:
| JP2002162726A | 2002-06-07 | |||
| JPH10148929A | 1998-06-02 | |||
| JPH1069064A | 1998-03-10 |
Attorney, Agent or Firm:
FUJIMURA, YASUO (JP)
Toson Yasuo (JP)
Toson Yasuo (JP)
Download PDF:
Claims:
Previous Patent: ANODIC OXIDATION DEVICE
Next Patent: METHOD AND MASS FLOW CONTROLLER FOR ENHANCED OPERATING RANGE
Next Patent: METHOD AND MASS FLOW CONTROLLER FOR ENHANCED OPERATING RANGE