Title:
PHASE-SHIFT MASK AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/218073
Kind Code:
A1
Abstract:
A phase-shift mask and a manufacturing method therefor, the phase-shift mask comprising: a transparent substrate (101), wherein the transparent substrate (101) defines a light-transmitting region (104) and at least one light-shielding region (103) adjacent to the light-transmitting region (104); a light-shielding layer (102), which covers the light shielding region (103) on the transparent substrate (101); and a phase-shift side wall sheet (106), which is located on a sidewall of the light-shielding layer (102) between the light-transmitting region (104) and the light-shielding region (103), wherein the phase-shift side wall sheet (106) causes phase conversion and/or optical attenuation to exposure light rays that pass through the phase-shift side wall sheet (106). The phase and contrast of exposure light rays at the light-transmitting region (104) and the light-shielding region (103) are controlled by means of adjusting the thickness and width of the phase-shift side wall sheet (106), thereby avoiding "ghost lines", such that the contrast ratio and resolution of a photoresist pattern obtained by means of performing exposure using the phase-shift mask are greatly improved.
Inventors:
HUANG ZAOHONG (CN)
REN XINPING (CN)
REN XINPING (CN)
Application Number:
PCT/CN2022/080333
Publication Date:
October 20, 2022
Filing Date:
March 11, 2022
Export Citation:
Assignee:
SHANGHAI CHUANXIN SEMICONDUCTOR CO LTD (CN)
International Classes:
G03F1/32
Foreign References:
| CN112099308A | 2020-12-18 | |||
| JP2004226893A | 2004-08-12 | |||
| CN108363270A | 2018-08-03 | |||
| CN108345171A | 2018-07-31 | |||
| CN103998985A | 2014-08-20 | |||
| US5322749A | 1994-06-21 | |||
| JP2000227651A | 2000-08-15 | |||
| CN1453635A | 2003-11-05 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)
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