Title:
PHONONIC CRYSTAL AND THIN FILM PIEZOELECTRIC SONIC SENSOR
Document Type and Number:
WIPO Patent Application WO/2020/232914
Kind Code:
A1
Abstract:
A thin film piezoelectric sonic sensor, comprising: a substrate layer (2), a ground electrode layer (3), and a piezoelectric layer (4) which are stacked. At least one transducer (5) is provided on the side of the piezoelectric layer (4) distant from the ground electrode layer (3); phononic crystals (1) at least formed in the piezoelectric layer (4) are correspondingly provided on the two sides of the transducer (5), and the resonant frequency of the thin film piezoelectric sonic sensor is located in a band gap of the phononic crystals (1). According to the thin film piezoelectric sonic sensor, the phononic crystals (1) are at least provided on the piezoelectric layer (4), the mechanical vibration stability of the piezoelectric layer (4) is improved, the sonic wave reflectivity is improved, the energy loss of sonic wave transmission is lowered, and the quality factor of the sensor is improved. A phononic crystal (1) comprises a matrix and a scatterer formed on the matrix; the matrix is formed by at least two stacked dielectric layers; materials of any one of the dielectric layers are different from those of other dielectric layers. The phononic crystal (1) can effectively reduce the sonic wave energy loss, and effectively improve the quality factor of the sensor when the phononic crystal is applied to the thin film piezoelectric sonic sensor.
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Inventors:
ZHOU LIANQUN (CN)
LI CHUANYU (CN)
TANG YUGUO (CN)
ZHANG WEI (CN)
GUO ZHEN (CN)
YAO JIA (CN)
ZHANG ZHIQI (CN)
LI JINZE (CN)
LI CHAO (CN)
LI CHUANYU (CN)
TANG YUGUO (CN)
ZHANG WEI (CN)
GUO ZHEN (CN)
YAO JIA (CN)
ZHANG ZHIQI (CN)
LI JINZE (CN)
LI CHAO (CN)
Application Number:
PCT/CN2019/105143
Publication Date:
November 26, 2020
Filing Date:
September 10, 2019
Export Citation:
Assignee:
SUZHOU INST BIOMEDICAL ENG & TECH CAS (CN)
International Classes:
H03H9/15; H03H9/02
Foreign References:
| CN109921759A | 2019-06-21 | |||
| US20130214879A1 | 2013-08-22 | |||
| US20120204415A1 | 2012-08-16 | |||
| TWI430570B | 2014-03-11 | |||
| US20180013398A1 | 2018-01-11 | |||
| TW201121234A | 2011-06-16 | |||
| CN1635705A | 2005-07-06 | |||
| CN107543570A | 2018-01-05 |
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
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