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Title:
PHOTOCONDUCTIVE MEMBER
Document Type and Number:
WIPO Patent Application WO/1982/001261
Kind Code:
A1
Abstract:
A photoconductive member which comprises a support, a photoconductive layer having silicon atoms as a base and an amorphous material containing either of hydrogen atoms and halogen atoms, and an intermediate layer formed therebetween, which inhibits the flow of carriers from the support into the photoconductive layer, permits carriers generated in the photoconductive layer by electromagnetic wave radiation thereon toward the support to pass through into the support, and is formed of an amorphous material containing silicon atoms and nitrogen atoms as the ingredients. A photoconductive member which further comprises a support, a photoconductive layer having silicon atoms as a base and an amorphous material containing either of hydrogen atoms and halogen atoms, and an intermediate layer formed therebetween, wherein the intermediate layer is formed of an amorphous material containing silicon atoms and nitrogen atoms as ingredients.

Inventors:
INOUE E (JP)
SHIRAI S (JP)
SHIMIZU I (JP)
Application Number:
PCT/JP1981/000256
Publication Date:
April 15, 1982
Filing Date:
September 25, 1981
Export Citation:
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Assignee:
CANON KK (JP)
International Classes:
G03G5/02; G03G5/04; G03G5/08; G03G5/082; H01L31/08; (IPC1-7): G03G5/08; G03G5/02; G03G5/04; H01L31/08
Foreign References:
JPS5538664B11980-10-06
JPS5478135A1979-06-22
JPS5486341A1979-07-09
JPS54143645A1979-11-09
JPS54145537A1979-11-13
JPS54145539A1979-11-13
JPS54145540A1979-11-13
JPS54145541A1979-11-13
JPS54155046A1979-12-06
JPS554040A1980-01-12
JPS557761A1980-01-19
JPS5553331A1980-04-18
JPS5562779A1980-05-12
JPS5562780A1980-05-12
JPS5562781A1980-05-12
JPS5569149A1980-05-24
JPS5589844A1980-07-07
JPS5591884A1980-07-11
JPS5591885A1980-07-11
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