Title:
PHOTODETECTION ELEMENT, AND METHOD FOR MANUFACTURING PHOTODETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/248974
Kind Code:
A1
Abstract:
The purpose of the present invention is to relax restrictions on the placement position of through electrodes connected to external terminals of a packaged photodetection element. This photodetection element comprises: a first chip on which a first wiring layer is formed; a second chip on which a second wiring layer is formed, the second chip being stacked on the first chip; a third chip on which a third wiring layer is formed, the third chip being stacked on the first chip aligned with a gap open between the third chip and the second chip; a buried layer stacked on the first chip so that the second chip and the third chip are buried; and a through electrode positioned between the second chip and the third chip, penetrating the buried layer and connected to the first wiring layer. The first wiring layer may also be directly joined to the second wiring layer and the third wiring layer.
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Inventors:
FUJIMAGARI JUNICHIRO (JP)
NAGATA MASAYA (JP)
HIRATSUKA TATSUMASA (JP)
KOMAI NAOKI (JP)
NAGATA MASAYA (JP)
HIRATSUKA TATSUMASA (JP)
KOMAI NAOKI (JP)
Application Number:
PCT/JP2023/022581
Publication Date:
December 28, 2023
Filing Date:
June 19, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L25/07; H01L21/02; H01L21/3205; H01L21/768; H01L23/522; H01L25/065; H01L25/18; H01L27/146
Domestic Patent References:
| WO2020079945A1 | 2020-04-23 |
Foreign References:
| JP2022040579A | 2022-03-11 | |||
| JP2011151375A | 2011-08-04 | |||
| JP2022077181A | 2022-05-23 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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