Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/196459
Kind Code:
A1
Abstract:
[Problem] To provide a photoelectric conversion element and an imaging device with which it is possible to achieve enhanced image quality. [Solution] A photoelectric conversion element comprising: a photoelectric conversion layer including a compound semiconductor material; a mesa portion which is disposed in a part on an upper-surface side of the photoelectric conversion layer, and which includes a compound semiconductor material having a bandgap energy greater than a bandgap energy of the photoelectric conversion layer; a first electrode disposed on the mesa portion to read, via the mesa portion, charge obtained by photoelectric conversion by the photoelectric conversion layer; and a transfer gate disposed to face a part of the upper-surface side of the photoelectric conversion layer and at least a part of a side wall of the mesa portion.
More Like This:
JPH0856009 | LAMINATED STRUCTURE OF THIN FILM SEMICONDUCTOR |
JPS57196568 | PHOTO TRIGGER THYRISTOR |
JPH03284883 | PHOTODETECTOR |
Inventors:
MINARI HIDEKI (JP)
MATSUMOTO RYOSUKE (JP)
MATSUMOTO RYOSUKE (JP)
Application Number:
PCT/JP2022/010109
Publication Date:
September 22, 2022
Filing Date:
March 08, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/10; H01L27/146
Domestic Patent References:
WO2018212175A1 | 2018-11-22 | |||
WO2010047412A1 | 2010-04-29 | |||
WO2014112279A1 | 2014-07-24 |
Foreign References:
JP2017028078A | 2017-02-02 | |||
JPH06163870A | 1994-06-10 | |||
JPH06268189A | 1994-09-22 |
Attorney, Agent or Firm:
NAKAMURA Yukitaka et al. (JP)
Download PDF: