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Title:
PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, MATERIAL FOR PHOTOELECTRIC CONVERSION ELEMENT, MATERIAL FOR IMAGING ELEMENT, AND MATERIAL FOR OPTICAL SENSOR
Document Type and Number:
WIPO Patent Application WO/2020/203355
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a photoelectric conversion element having an excellent photoelectric conversion efficiency, and having a stable performance even when a photoelectric conversion film is produced by vapor deposition using a vapor deposition material utilized for vapor deposition for a long period of time. The other problems addressed by the present invention are to provide an imaging element, an optical sensor, a material for a photoelectric conversion element, a material for an imaging element, and a material for an optical sensor. This photoelectric conversion element is obtained by laminating an electroconductive film, a photoelectric conversion film, and a transparent electroconductive film in this sequence, wherein the photoelectric conversion film includes a compound represented by formula (1) and an n-type semiconductor material.

Inventors:
YOSHIOKA TOMOAKI (JP)
IWASAKI KOICHI (JP)
Application Number:
PCT/JP2020/012327
Publication Date:
October 08, 2020
Filing Date:
March 19, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L51/42
Domestic Patent References:
WO2018207722A12018-11-15
WO2012111811A12012-08-23
Foreign References:
JP2015065266A2015-04-09
JP2011254071A2011-12-15
JP2010129919A2010-06-10
JP2012049352A2012-03-08
CN107987093A2018-05-04
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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