Title:
PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL SENSOR, IMAGING ELEMENT, AND COMPOUND
Document Type and Number:
WIPO Patent Application WO/2019/098161
Kind Code:
A1
Abstract:
The present invention provides a photoelectric conversion element having excellent heat resistance. Also provided are an optical sensor and an imaging element comprising the photoelectric conversion element. Also provided is a compound used in the photoelectric conversion element. This photoelectric conversion element comprises a conductive film, a photoelectric conversion film, and a transparent conductive film in this order. The photoelectric conversion film contains a compound represented by formula (1) or (2).
Inventors:
YOSHIOKA TOMOAKI (JP)
FUKUZAKI EIJI (JP)
MASHIKO TOMOYUKI (JP)
FUKUZAKI EIJI (JP)
MASHIKO TOMOYUKI (JP)
Application Number:
PCT/JP2018/041887
Publication Date:
May 23, 2019
Filing Date:
November 13, 2018
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L31/10; C07D495/04; C07D495/14; H01L27/146; H01L27/30; H01L51/42; H01L51/44; H01L51/46
Foreign References:
| US20130042918A1 | 2013-02-21 | |||
| JP2016102117A | 2016-06-02 | |||
| JP2012077064A | 2012-04-19 | |||
| JP2014082483A | 2014-05-08 |
Other References:
NOWAK-KROL, A. ET AL.: "Modulation of band gap and p- versus n- semiconductor character of ADA dyes by core and acceptor group variation", ORGANIC CHEMISTRY FRONTIERS, vol. 3, no. 5, 19 February 2016 (2016-02-19), pages 545 - 555, XP055609385
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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