Title:
PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/187208
Kind Code:
A1
Abstract:
The photoelectric conversion element according to an embodiment of the present disclosure is provided, in the sequence listed, with a first electrode, an organic photoelectric conversion layer, an n-type buffer layer, and a second electrode. The LUMO level of the n-type buffer layer satisfies the following relationship (1), and the number of states of the n-type buffer layer satisfies the following relationships (2) and (3). Ew: work function of second electrode, EN: LUMO level of n-type buffer layer, Ei: LUMO level of electron transportation material of organic photoelectric conversion layer, Nb: number of states of n-type buffer layer, D(E): state density of LUMO level of n-type buffer layer
Inventors:
NEGISHI YUKI (JP)
ENOKI OSAMU (JP)
MOGI HIDEAKI (JP)
KOBAYASHI HAJIME (JP)
ENOKI OSAMU (JP)
MOGI HIDEAKI (JP)
KOBAYASHI HAJIME (JP)
Application Number:
PCT/JP2021/009093
Publication Date:
September 23, 2021
Filing Date:
March 08, 2021
Export Citation:
Assignee:
SONY GROUP CORP (JP)
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L51/42; H01L21/3205; H01L21/768; H01L23/522; H01L27/146; H01L27/30
Domestic Patent References:
| WO2017014146A1 | 2017-01-26 | |||
| WO2008080321A1 | 2008-07-10 |
Foreign References:
| JP2018515917A | 2018-06-14 | |||
| JP2015079838A | 2015-04-23 | |||
| JP2004128028A | 2004-04-22 | |||
| JP2019134049A | 2019-08-08 | |||
| JP2019096632A | 2019-06-20 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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