PHOTOLITHOGRAPHIC PATTERNING METHOD

WIPO Patent Application WO/2024/096229

A1

A patterning method according to one embodiment of the present invention comprises the steps of: forming a first photoresist layer on a substrate; performing first segmented exposure on the first photoresist layer with first exposure energy equal to or greater than threshold energy by using photo-exposure equipment and a reticle having lines and spaces of a mask pattern; and moving the reticle by a distance equal to or smaller than the width of the lines of the mask pattern and using the reticle to perform second segmented exposure to the first photoresist layer with second exposure energy equal to or greater than the threshold energy and form a photoresist pattern. The spatial distribution of the first exposure energy overlaps the spatial distribution of the second exposure energy.

JP2002328471	PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE MATERIAL, METHOD FOR PRODUCING RELIEF PATTERN AND METHOD FOR PRODUCING POLYIMIDE PATTERN
JP7437600	Rotary coating device
JP2004266129	CHARGED PARTICLE BEAM EXPOSURE DEVICE, METHOD FOR EXPOSURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SONG JUNGCHUL (KR)
BAK MIN JUN (KR)
LEE WAN-GYU (KR)
PARK JONG-WAN (KR)

PCT/KR2023/008108

May 10, 2024

June 13, 2023

Click for automatic bibliography generation  

KOREA ADVANCED INST SCI & TECH (KR)

H01L21/027; G03F7/20; H01L21/033; H01L21/308

KR20120112930A	2012-10-12
KR20090069769A	2009-07-01
KR20080092154A	2008-10-15
KR20100074622A	2010-07-02
KR970012016A	1997-03-29
KR20060134598A	2006-12-28

NURY PATENT LAW FIRM (KR)

View/Download PDF      PDF Help

Previous Patent: SOLAR CELL PANEL

Next Patent: METHOD AND DEVICE FOR SETTING PARKING SPACES ON BASIS OF OCCUPIED OR UNOCCUPIED AREAS