PHOTOLITHOGRAPHY METHOD FOR PREPARING SEMICONDUCTOR VERTICAL CROSS-SECTIONAL STRUCTURE

WIPO Patent Application WO/2023/217243

A1

A photolithography method for preparing a semiconductor vertical cross-sectional structure. A partition member (3) is designed according to a photolithographic pattern, the partition member (3) comprises a cover plate (31), the cover plate (31) has a shielding area (31a) and hollow areas (31b), and the periphery of each hollow area (31b) extends vertically downward to form a partition plate (32); after a photoresist (2) is coated on the surface of a semiconductor substrate (1), the partition member (3) is placed on the photoresist (2), the partition plates (32) are embedded in the photoresist (2) to physically isolate the portions of the photoresist (2) corresponding to the shielding area (31a) and the hollow areas (31b), and then exposure, development, and subsequent etching processes are performed. The partition member (3) physically isolates the portions of the photoresist (2) requiring exposure, thereby realizing a vertical cross section of 90 degrees, and realizing a low-cost and high-precision photolithography process.

WU TINGZHU (CN)
CHEN JINLAN (CN)
LAI SHOUQIANG (CN)
LIU SHIBIAO (CN)
LU TINGWEI (CN)
CHEN GUOLONG (CN)
LIN ZONGMING (CN)
ZHU LIHONG (CN)
LV YIJUN (CN)
CHEN ZHONG (CN)

PCT/CN2023/093642

November 16, 2023

May 11, 2023

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UNIV XIAMEN (CN)

G03F7/00; G03F1/00; G03F7/20

CN114967316A	2022-08-30
US20050026090A1	2005-02-03
US20050082700A1	2005-04-21
US20130287881A1	2013-10-31
CN102809863A	2012-12-05
CN106371286A	2017-02-01

SHOUCHUANG JUNHE PATENT AGENT CO., LTD.XIAMEN (CN)

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