PHOTOSENSITIVE MEMBER FOR ELECTROPHOTOGRAPHY

Title:

PHOTOSENSITIVE MEMBER FOR ELECTROPHOTOGRAPHY

Document Type and Number:

WIPO Patent Application WO/1985/002691

Kind Code:

A1

Abstract:

A layer arrangement of a photosensitive member for electrophotography which includes an amorphous silicon layer. The amorphous silicon layer includes a long-wave sensitization region (5) which has a narrower forbidden band width than that of the base (6) of the photosensitive member, the long-wave sensitization region (5) being formed by laminating at least two layers of semiconductor films (511, 512 and 513) which differ in forbidden band width or conductivity or both. The photosensitive member displays high sensitivity and stability in the long-wave region for the semiconductor laser and is useful as a photosensitive member for a laser-beam printer.

Inventors:

MARUYAMA EIICHI (JP)
FUJIKURA MAKOTO (JP)
MATSUBARA HIROKAZU (JP)
SHIMADA TOSHIKAZU (JP)

Application Number:

PCT/JP1984/000598

Publication Date:

June 20, 1985

Filing Date:

December 14, 1984

Export Citation:

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Assignee:

HITACHI LTD (JP)

International Classes:

G03G5/04; G03G5/08; G03G5/082; (IPC1-7): G03G5/08

Foreign References:

JPS58189643A	1983-11-05
JPS57105745A	1982-07-01
JPS5876842A	1983-05-10
JPS58154850A	1983-09-14
JPS58190954A	1983-11-08
JPS59109057A	1984-06-23

Other References: