Title:
PHOTOVOLTAIC ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/185356
Kind Code:
A1
Abstract:
This photovoltaic element is provided with: an amorphous semiconductor film of a first conductivity type (an n-type amorphous silicon layer (5)) on a surface of an n-type single crystal silicon substrate (1) serving as a semiconductor substrate, said surface being on the reverse side of the light incident surface; a first conductive semiconductor film (a first indium oxide layer (9)) having a low carrier concentration on the amorphous semiconductor; and a second conductive semiconductor film (a second indium oxide layer (10)) having a high carrier concentration on the first conductive semiconductor film. Insulating fine particles (8) are contained in the first conductive semiconductor film having a low carrier concentration. Consequently, adsorption at the conductive semiconductor films does not occur and no loss is caused even if light is scattered and the optical path length is increased. In addition, a good balance is achieved between suppression of infrared absorption and increase of the optical path length by means of effective scattering, so that a high conversion efficiency can be achieved without causing deterioration in the electrical characteristics even if a thin semiconductor substrate of 100 μm or less is used.
Inventors:
WATAHIKI TATSURO (JP)
Application Number:
PCT/JP2014/062489
Publication Date:
November 20, 2014
Filing Date:
May 09, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L31/0747; H01L31/0224; H01L31/054
Domestic Patent References:
| WO2012105153A1 | 2012-08-09 | |||
| WO2009116580A1 | 2009-09-24 | |||
| WO2009116578A1 | 2009-09-24 | |||
| WO2007040065A1 | 2007-04-12 |
Foreign References:
| JP2013089766A | 2013-05-13 | |||
| JP2012191187A | 2012-10-04 | |||
| US20110290309A1 | 2011-12-01 |
Attorney, Agent or Firm:
SAKAI, HIROAKI (JP)
Hiroaki Sakai (JP)
Hiroaki Sakai (JP)
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