PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD FOR PIEZOELECTRIC DEVICE

Title:

PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD FOR PIEZOELECTRIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2012/128268

Kind Code:

A1

Abstract:

In order to improve the power durability of an electrode formed upon a piezoelectric film, a piezoelectric device and manufacturing method for the piezoelectric device are provided which are capable of greatly reducing the concentration of an etching solution and etching time. Of a +C-plane (22) of a +Z-axis-side of a piezoelectric film (20) and a -C-plane (12) of a -Z-axis-side of the piezoelectric film (20), the -C-plane (12) of the -Z-axis-side of the piezoelectric film (20) is etched. As a result, a -Z-plane (21), which can be epitaxially grown, of the piezoelectric film (20) is exposed. Then, Ti is epitaxially grown toward the -Z-axis direction upon the -Z-plane (21) of the piezoelectric film (20) so that the crystalline growth plane of the same is parallel to the -Z-plane (21) of the piezoelectric film (20). Next, Al is epitaxially grown toward the -Z-axis direction upon the surface of a Ti electrode (65) so that the crystalline growth plane of the same is parallel to the -Z-plane (21) of the piezoelectric film (20).

Inventors:

ITO KOREKIYO (JP)
IWAMOTO TAKASHI (JP)

Application Number:

PCT/JP2012/057119

Publication Date:

September 27, 2012

Filing Date:

March 21, 2012

Export Citation:

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Assignee:

MURATA MANUFACTURING CO (JP)
ITO KOREKIYO (JP)
IWAMOTO TAKASHI (JP)

International Classes:

H01L41/08; H03H9/25; H01L41/09; H01L41/113; H01L41/18; H03H3/08; H03H9/145

Domestic Patent References:

WO2009081651A1

2009-07-02

Foreign References:

JP2003152498A	2003-05-23
JP2002305425A	2002-10-18
JPH0529866A	1993-02-05
JP2002534886A	2002-10-15
JP2002305425A	2002-10-18

Other References: