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Title:
PIEZOELECTRIC FILM, PIEZOELECTRIC FILM MANUFACTURING METHOD, PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/210563
Kind Code:
A1
Abstract:
This piezoelectric film has as a main component a piezoelectric material having a Wurtzite-type crystal structure, and has an additive element including Kr; the piezoelectric material contains, as positive elements, one component selected from the group consisting of Zn, Al, Ga, Cd and Si, the ratio of the content of the element Kr to the content of elements contained in the piezoelectric material is 0.01-0.05 atm%.

Inventors:
TSUBURAOKA GAKU (JP)
NAKAMURA DAISUKE (JP)
ISHIKAWA TAKETO (JP)
MACHINAGA HIRONOBU (JP)
Application Number:
PCT/JP2022/015069
Publication Date:
October 06, 2022
Filing Date:
March 28, 2022
Export Citation:
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Assignee:
NITTO DENKO CORP (JP)
International Classes:
H01L41/187; C04B35/453; C23C14/08; C23C14/34; H01L41/316; H01L41/319
Domestic Patent References:
WO2004101842A12004-11-25
WO2020067330A12020-04-02
WO2020049880A12020-03-12
WO2020066930A12020-04-02
Foreign References:
JP2005351664A2005-12-22
JP2020088281A2020-06-04
JP2013004707A2013-01-07
Other References:
YING MINJU, SAEEDI AHMAD M. A., YUAN MIAOMIAO, ZHANG XIA, LIAO BIN, ZHANG XU, MEI ZENGXIA, DU XIAOLONG, HEALD STEVE M., FOX A. MAR: "Extremely large d 0 magnetism in krypton implanted polar ZnO films", JOURNAL OF MATERIALS CHEMISTRY C, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 7, no. 5, 31 January 2019 (2019-01-31), GB , pages 1138 - 1145, XP055972965, ISSN: 2050-7526, DOI: 10.1039/C8TC05929B
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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