Title:
PIEZOELECTRIC MEMS SILICON RESONATOR HAVING BEAM STRUCTURE, FORMING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/226914
Kind Code:
A1
Abstract:
The present invention provides a piezoelectric MEMS silicon resonator having a beam structure, a forming method therefor, and an electronic device. The forming method comprises: providing, as a substrate, an SOI silicon wafer having a lower cavity, a device silicon layer being provided above the lower cavity; sequentially forming a lower electrode, a piezoelectric layer, and an upper electrode; etching the device silicon layer to form a beam structure; forming a sacrificial layer on a current semiconductor structure; growing an encapsulation material on the sacrificial layer to form a thin film encapsulation layer, and then etching to form a through hole at a location, above a beam structure region, in the thin film encapsulation layer; removing the sacrificial layer above a vibration region of the beam structure to form an upper cavity, and retaining the sacrificial layer above a fixed end of the beam structure; growing the encapsulation material again to seal the through hole; forming an electrical-connection through hole that passes through the thin film encapsulation layer and the retained sacrificial layer; and forming an electrode connection in the electrical-connection through hole. The piezoelectric MEMS silicon resonator manufactured by the forming method can maintain a high device vacuum degree for a long time, and implement a high quality factor and long-term stability of the resonator.
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Inventors:
ZHANG MENGLUN (CN)
YANG QINGRUI (CN)
GONG SHAOBO (CN)
YANG QINGRUI (CN)
GONG SHAOBO (CN)
Application Number:
PCT/CN2021/091101
Publication Date:
November 03, 2022
Filing Date:
April 29, 2021
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H01L41/00; H03H3/02; H03H9/02; H03H9/05; H03H9/10
Foreign References:
| CN110266285A | 2019-09-20 | |||
| CN102122939A | 2011-07-13 | |||
| CN112039485A | 2020-12-04 | |||
| CN108281363A | 2018-07-13 | |||
| US10217930B1 | 2019-02-26 |
Attorney, Agent or Firm:
CHINA SMART INTELLECTUAL PROPERTY LTD. (CN)
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