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Title:
PIEZOELECTRIC TRANSDUCER PREPARATION METHOD AND PIEZOELECTRIC TRANSDUCER
Document Type and Number:
WIPO Patent Application WO/2022/233074
Kind Code:
A1
Abstract:
The present application relates to a piezoelectric transducer preparation method and a piezoelectric transducer. The method comprises: first, preparing a bottom acoustic reflection layer on a carrier wafer; then preparing a top acoustic reflection layer on a piezoelectric wafer; then combining the side of the bottom acoustic reflection layer that is away from the carrier wafer with the side of the top acoustic reflection layer that is away from the piezoelectric wafer; and finally, thinning the piezoelectric wafer to form a piezoelectric transducer. The carrier wafer performs a carrying function, a piezoelectric film formed by thinning the piezoelectric wafer can be excited by acoustic vibration, and the top acoustic reflection layer and the bottom acoustic reflection layer can limit the acoustic vibration, such that the resulting piezoelectric transducer can work at a high frequency. The piezoelectric transducer prepared by using the method has a specific stacking combination and a piezoelectric film, can excite and support a high-performance acoustic vibration mode, has a low inherent loss, and can obtain a higher capacitance per unit area while maintaining the unit area, such that a good working performance of the prepared piezoelectric transducer is achieved.

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Inventors:
GONG SONGBIN (CN)
VIDAL-ALVAREZ GABRIEL (CN)
Application Number:
PCT/CN2021/097217
Publication Date:
November 10, 2022
Filing Date:
May 31, 2021
Export Citation:
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Assignee:
SPECTRON SHENZHEN TECH CO LTD (CN)
International Classes:
H03H9/17; H01L41/27
Foreign References:
CN110224680A2019-09-10
US20080211352A12008-09-04
US20060145785A12006-07-06
CN108028637A2018-05-11
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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