Title:
PLASMA ACTIVATION TREATMENT FOR WAFER BONDING
Document Type and Number:
WIPO Patent Application WO/2020/140212
Kind Code:
A1
Abstract:
Wafer bonding methods (400) comprise: a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer (202) and a front surface of a second wafer (204) (402). After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer (202) and the front surface of the second wafer (204) (404). After the second plasma activation treatment, the first wafer (202) and the second wafer (204) are bonded such that the treated front surface of the first wafer (202) is in physical contact with the treated front surface of the second wafer (204) (408).
Inventors:
LIU MENGYONG (CN)
DING TAO TAO (CN)
LIU WU (CN)
XING RUI YUAN (CN)
CHEN GUOLIANG (CN)
DING TAO TAO (CN)
LIU WU (CN)
XING RUI YUAN (CN)
CHEN GUOLIANG (CN)
Application Number:
PCT/CN2019/070143
Publication Date:
July 09, 2020
Filing Date:
January 02, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L21/60; H01L21/50
Foreign References:
| US5421953A | 1995-06-06 | |||
| US20060032582A1 | 2006-02-16 | |||
| CN107633997A | 2018-01-26 | |||
| CN106571334A | 2017-04-19 | |||
| CN105197880A | 2015-12-30 | |||
| JP2017079316A | 2017-04-27 | |||
| US20070111471A1 | 2007-05-17 | |||
| US20140141560A1 | 2014-05-22 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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