PLASMA CVD DEVICE AND PLASMA CVD METHOD

Title:

PLASMA CVD DEVICE AND PLASMA CVD METHOD

Document Type and Number:

WIPO Patent Application WO/2014/142023

Kind Code:

A1

Abstract:

The present invention is a plasma CVD device provided with a vacuum vessel, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum vessel. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-forming space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-forming space impinges. The length of the anode in the direction of gas supply and the length of the cathode in the direction of gas supply are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rates is provided.

Inventors:

SAKAMOTO KEITARO (JP)
TONAI SHUNPEI (JP)
EJIRI HIROE (JP)
NOMURA FUMIYASU (JP)

Application Number:

PCT/JP2014/055951

Publication Date:

September 18, 2014

Filing Date:

March 07, 2014

Export Citation:

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Assignee:

TORAY INDUSTRIES (JP)

International Classes:

C23C16/509; H01L21/31; H05H1/46

Foreign References:

JP2006252843A	2006-09-21
JP2003303699A	2003-10-24
JP2004235105A	2004-08-19
JP2004323928A	2004-11-18
JP2005347278A	2005-12-15
JP2011524468A	2011-09-01
JP2006283135A	2006-10-19
JP2008274385A	2008-11-13

Other References: