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Title:
PLASMA ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/1998/016950
Kind Code:
A1
Abstract:
Etching gas is introduced into a treatment chamber (16) and a plasma is generated to etch a silicon nitride film (12) which is formed on the field silicon oxide film (4) of a wafer (W). Mixed gas which contains at least CH�2?F�2? gas and O�2? gas is used as the etching gas. The treatment pressure and the mixing ratio (CH�2?F�2?/O�2?) are used as parameters for setting a plasma etching apparatus in accordance with the set value of the uniformity in an etched surface. The more strict the set value of the uniformity in the etched surfaces, the higher one of the treatment pressure and the mixing ratios.

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Inventors:
YATSUDA KOICHI (JP)
NISHIARA TETSUYA (JP)
INAZAWA KOUICHIRO (JP)
OKAMOTO SHIN (JP)
Application Number:
PCT/JP1997/003634
Publication Date:
April 23, 1998
Filing Date:
October 09, 1997
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
YATSUDA KOICHI (JP)
NISHIARA TETSUYA (JP)
INAZAWA KOUICHIRO (JP)
OKAMOTO SHIN (JP)
International Classes:
H01L21/311; H01L21/3065; (IPC1-7): H01L21/3065; H01L21/768
Foreign References:
JPH0859215A1996-03-05
JPH06244152A1994-09-02
JPS60115232A1985-06-21
JPH03145725A1991-06-20
Other References:
See also references of EP 0945896A4
Attorney, Agent or Firm:
Suzuye, Takehiko (7-2 Kasumigaseki 3-chom, Chiyoda-ku Tokyo 100, JP)
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