PLASMA ETCHING METHOD

Title:

PLASMA ETCHING METHOD

Document Type and Number:

WIPO Patent Application WO/2017/159512

Kind Code:

A1

Abstract:

This plasma etching method includes: a sedimentation step in which a thin film is formed in a processing container having an atmosphere including a first processing gas and a second processing gas, said first processing gas including at least one type of gas containing fluorine atoms and/or carbon atoms and said second processing gas having a noble gas as the main component thereof; and an etching step in which a substrate to be processed is plasma etched inside a processing container having an atmosphere including at least the second processing gas. The plasma etching method switches between and alternately implements the sedimentation step and the etching step. If the atmosphere in the processing container in the sedimentation step includes the first and second processing gases, the atmosphere is configured so as to contain 2.4-3.1 times more fluorine atoms than carbon atoms, on a mass basis.

Inventors:

MATSUURA GO (JP)

Application Number:

PCT/JP2017/009332

Publication Date:

September 21, 2017

Filing Date:

March 08, 2017

Export Citation:

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Assignee:

ZEON CORP (JP)

International Classes:

H01L21/3065

Foreign References:

JP2013510445A	2013-03-21
JP2016027594A	2016-02-18
JP2010219153A	2010-09-30
JP2015032597A	2015-02-16
JP2014522104A	2014-08-28

Other References: