Title:
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/108549
Kind Code:
A1
Abstract:
Provided is a plasma processing apparatus wherein durability of a part, a member and
a component, which are exposed to plasma atmosphere in a chamber used for performing plasma
etching in a corrosion resistant gas atmosphere is improved, resistance to plasma
erosion of a film formed on the surface of the member and the like in the corrosion
resistant gas atmosphere is improved, and furthermore, generation of particles
of corrosion resistant products even under high plasma output is prevented.
A plasma processing method using such plasma processing apparatus is also provided.
In the plasma processing apparatus for processing the surface of a subject which
is stored in the chamber to be processed is processed by etching process gas plasma.
The part exposed to the plasma generating atmosphere in the chamber or the member
arranged inside the chamber or the surface of the component is coated with at least
a porous layer composed of a metal oxide and a secondary recrystallized layer
of the metal oxide formed on the porous layer.
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Inventors:
KOBAYASHI YOSHIYUKI (JP)
Application Number:
PCT/JP2007/056130
Publication Date:
September 27, 2007
Filing Date:
March 16, 2007
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
KOBAYASHI YOSHIYUKI (JP)
KOBAYASHI YOSHIYUKI (JP)
International Classes:
H01L21/3065; C04B41/87; C23C4/10; H05H1/46
Foreign References:
| JP2005256098A | 2005-09-22 | |||
| JPH10144654A | 1998-05-29 | |||
| JPH104083A | 1998-01-06 | |||
| JPS5996273A | 1984-06-02 |
Attorney, Agent or Firm:
OGAWA, Junzo et al. (8-9 Ginza 2-chome, Chuo-k, Tokyo 61, JP)
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