Title:
PLASMA PROCESSING DEVICE, AND METHOD FOR CONTROLLING SOURCE FREQUENCY OF SOURCE HIGH-FREQUENCY ELECTRIC POWER
Document Type and Number:
WIPO Patent Application WO/2024/024681
Kind Code:
A1
Abstract:
The disclosed plasma processing device comprises a chamber, a substrate-supporting portion, a high-frequency power source, and a bias power source. The substrate-supporting portion has a bias electrode and is provided within the chamber. The high-frequency power source is configured to produce source high-frequency electric power in order to generate plasma within the chamber. The bias power source is configured to periodically supply an electric bias having a waveform period to the bias electrode. The high-frequency power source is configured to set the source frequency of the source high-frequency electric power in each of a plurality of phase periods within the waveform period to a frequency obtained by adding a frequency shift amount for minimizing the extent of reflection of the source high-frequency electric power, and random noise, to the source frequency in the same phase period within the preceding waveform period.
Inventors:
YAZAKI YUMA (JP)
NAGAMI KOICHI (JP)
KIKUCHI YUTO (JP)
NAGAMI KOICHI (JP)
KIKUCHI YUTO (JP)
Application Number:
PCT/JP2023/026832
Publication Date:
February 01, 2024
Filing Date:
July 21, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46
Foreign References:
| JP2020004710A | 2020-01-09 | |||
| JP2022067851A | 2022-05-09 | |||
| JP2021097033A | 2021-06-24 | |||
| JP2021106354A | 2021-07-26 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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