Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/070945
Kind Code:
A1
Abstract:
The disclosed plasma processing device is provided with a chamber, a gas supply unit, an exhaust device, a substrate supporting unit, an upper electrode, a power source, and a ring electrode. The gas supply unit is configured to supply process gas into the chamber. The exhaust device is configured to exhaust the gas in the chamber. The substrate supporting unit includes a lower electrode, which floats electrically from a ground potential, and is provided in the chamber. The upper electrode is provided above the substrate supporting unit. The power source is electrically connected to the upper electrode, and is configured either to generate high-frequency electric power, or to generate a direct current voltage pulse periodically. The ring electrode is provided around the substrate supporting unit in such a way as to surround the substrate supporting unit, and is connected to ground.
Inventors:
SHINDO TAKAHIRO (JP)
Application Number:
PCT/JP2021/034089
Publication Date:
April 07, 2022
Filing Date:
September 16, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; C23C16/515; H01L21/3065; H01L21/31; H01L21/316
Foreign References:
| JP2020095793A | 2020-06-18 | |||
| JP2004165460A | 2004-06-10 | |||
| JP2000188286A | 2000-07-04 | |||
| JP2015004131A | 2015-01-08 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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