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Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/149070
Kind Code:
A1
Abstract:
Provided is a plasma processing method that is performed in a plasma processing apparatus. The plasma processing method comprises a step (a) for applying a voltage to a lower electrode of a substrate support unit, in a state in which a chamber of the plasma processing apparatus is supplied with a gas. The substrate support unit is provided in the chamber. The plasma processing method further comprises a step (b) for generating plasma by supplying a high frequency after application of the voltage to the lower electrode is started in step (a). The step (a) and the step (b) are performed in a state in which no object is placed on a substrate support surface of the substrate support unit.

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Inventors:
NAKAMURA KOICHIRO (JP)
KIYOFUJI NORIHISA (KR)
Application Number:
PCT/JP2022/044981
Publication Date:
August 10, 2023
Filing Date:
December 06, 2022
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23C16/44; H01L21/31; H05H1/46
Foreign References:
JP2019036658A2019-03-07
JP2012204644A2012-10-22
JP2020077657A2020-05-21
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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