PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

WIPO Patent Application WO/2023/210269

A1

The present invention provides a plasma processing method which is capable of achieving the effects of (1) reduction of a copper layer, (2) high-speed ashing of a photoresist and (3) hydrophilization of the inner surface of a via during plasma processing of a substrate for electronic devices, in said plasma processing a semiconductor substrate that has a copper layer in the surface being etched with use of a photoresist and being subjected to plating. A plasma processing method for plating of a substrate for electronic devices according to the present invention is characterized by comprising: (a) a step in which a substrate for electronic devices such as a semiconductor substrate, a lead frame or the like is arranged in a processing chamber; (b) a step in which a starting material gas that is composed of hydrogen and water vapor, and is obtained from an apparatus that electrolyzes water is supplied to the processing chamber; and (c) a step in which plasma processing is performed on the substrate for electronic devices by exciting the starting material gas in the processing chamber into a plasma.

JPH07105350	[Title of Invention] Photoreactor
JP2006222154	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP6796646	Etching method and etching equipment

TSUMAYA MADOKA (JP)
TERAI HIROKAZU (JP)

PCT/JP2023/013830

November 02, 2023

April 03, 2023

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SAMCO INC (JP)

H01L21/3065

JPH06151386A	1994-05-31
JPH06263591A	1994-09-20
JP2018502451A	2018-01-25
JP2006287071A	2006-10-19

KYOTO INTERNATIONAL PATENT LAW OFFICE (JP)

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