Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/019075
Kind Code:
A1
Abstract:
Provided is a feature for ascertaining the state of plasma processing. This plasma processing method includes generating plasma in a chamber and executing plasma treatment on a substrate in a plasma treatment device having the chamber and a substrate support part that is disposed in the chamber, the plasma processing method including (a) a step for disposing the substrate on the substrate support part, (b) a step for generating plasma within the chamber and executing plasma treatment on the substrate located on the substrate support part, (c) a step for acquiring data relating to ion flux produced between the plasma that is generated within the chamber and the substrate that is disposed on the substrate support part in step (b), and a step (d) for detecting the end point of the plasma processing on the basis of the data.
Inventors:
SHIMIZU YUSUKE (JP)
NAKAMURA SATORU (JP)
OZU TOSHIHISA (JP)
MATSUMOTO NAOKI (JP)
NAKAMURA SATORU (JP)
OZU TOSHIHISA (JP)
MATSUMOTO NAOKI (JP)
Application Number:
PCT/JP2023/026370
Publication Date:
January 25, 2024
Filing Date:
July 19, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/68; H05H1/46
Domestic Patent References:
| WO2021016223A1 | 2021-01-28 |
Foreign References:
| JP2020141116A | 2020-09-03 | |||
| JP2008536306A | 2008-09-04 | |||
| JP2009302390A | 2009-12-24 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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