Title:
PLASMA PROCESSING METHOD AND COMPUTER STORING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2005/086215
Kind Code:
A1
Abstract:
At the time of forming an oxynitride film on a substrate by nitriding the substrate with plasma generated by microwaves after forming an oxide film, the microwaves are intermittently supplied. Ion bombardment due to electron temperature reduction is reduced by intermittently supplying the microwaves, and the diffusing speed of a nitride seed in the oxide film is reduced. As a result, nitrogen concentrates on a nitride film interface on the substrate side, and the concentration increase can be suppressed. Thus, the film quality of the oxynitride film can be improved, a leak current can be reduced, and operation speed and NBTI resistance can be improved.
Inventors:
MATSUYAMA SEIJI (JP)
NAKANISHI TOSHIO (JP)
OZAKI SHIGENORI (JP)
ADACHI HIKARU (JP)
TAKATSUKI KOICHI (JP)
SATO YOSHIHIRO (JP)
NAKANISHI TOSHIO (JP)
OZAKI SHIGENORI (JP)
ADACHI HIKARU (JP)
TAKATSUKI KOICHI (JP)
SATO YOSHIHIRO (JP)
Application Number:
PCT/JP2005/003488
Publication Date:
September 15, 2005
Filing Date:
March 02, 2005
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
MATSUYAMA SEIJI (JP)
NAKANISHI TOSHIO (JP)
OZAKI SHIGENORI (JP)
ADACHI HIKARU (JP)
TAKATSUKI KOICHI (JP)
SATO YOSHIHIRO (JP)
MATSUYAMA SEIJI (JP)
NAKANISHI TOSHIO (JP)
OZAKI SHIGENORI (JP)
ADACHI HIKARU (JP)
TAKATSUKI KOICHI (JP)
SATO YOSHIHIRO (JP)
International Classes:
C23C8/36; H01L21/28; H01L21/314; H01L21/318; H01L29/51; H01L29/78; (IPC1-7): H01L21/318; H01L29/78
Foreign References:
| JP2003077915A | 2003-03-14 | |||
| JP2004022902A | 2004-01-22 | |||
| JP2002222941A | 2002-08-09 |
Attorney, Agent or Firm:
Kanemoto, Tetsuo (Shinjuku Akebonobashi Building 1-12, Sumiyoshi-ch, Shinjuku-ku Tokyo 65, JP)
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