Title:
PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/023877
Kind Code:
A1
Abstract:
The present invention provides a technology that can realize vertical etching by controlling process conditions. A plasma processing method according to one embodiment of the present invention involves a method for forming a shallow trench isolation and comprises: a first step for etching silicon by plasma; a second step for depositing a deposition film containing a silicon element on a mask; a third step for etching the silicon by plasma so as to have a vertical etching shape; and a fourth step for depositing a deposition film containing SiO on the mask. The first to fourth steps are repeated a prescribed number of times. The plasma in the third step is generated by high‐frequency power obtained by modulation using a first pulse, and the third step is performed while high‐frequency power obtained by modulation using a second pulse is supplied to a test piece in which the silicon is used as the substrate. The first pulse frequency in the third step is higher than the second pulse frequency in the third step.
Inventors:
NAM JUHYUN (JP)
ISHIMARU MASATO (JP)
TAHARA SHOTA (JP)
ISHIMARU MASATO (JP)
TAHARA SHOTA (JP)
Application Number:
PCT/JP2022/028584
Publication Date:
February 01, 2024
Filing Date:
July 25, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/76; H01L21/3065
Domestic Patent References:
| WO2020100338A1 | 2020-05-22 |
Foreign References:
| JP2015050440A | 2015-03-16 | |||
| JP2014204050A | 2014-10-27 | |||
| JP2021534545A | 2021-12-09 | |||
| JP2021534544A | 2021-12-09 | |||
| JP2021503700A | 2021-02-12 | |||
| JP2017069542A | 2017-04-06 | |||
| JP2014107363A | 2014-06-09 | |||
| JP2014531753A | 2014-11-27 |
Attorney, Agent or Firm:
DAI-ICHI INTERNATIONAL PATENT OFFICE, P.C. (JP)
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