Title:
PLASMA PROCESSING SYSTEM AND METHOD
Document Type and Number:
WIPO Patent Application WO2004095502
Kind Code:
A3
Abstract:
A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.
Inventors:
FINK STEVEN T (US)
MOROZ PAUL (US)
STRANG ERIC J (US)
MITROVIC ANDREJ S (US)
MOROZ PAUL (US)
STRANG ERIC J (US)
MITROVIC ANDREJ S (US)
Application Number:
PCT/US2004/001406
Publication Date:
June 09, 2005
Filing Date:
January 21, 2004
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
FINK STEVEN T (US)
MOROZ PAUL (US)
STRANG ERIC J (US)
MITROVIC ANDREJ S (US)
FINK STEVEN T (US)
MOROZ PAUL (US)
STRANG ERIC J (US)
MITROVIC ANDREJ S (US)
International Classes:
H01J37/00; H01J37/02; H01J37/32; (IPC1-7): H01J37/02; H01J37/32
Domestic Patent References:
| WO2001001467A1 | 2001-01-04 |
Foreign References:
| US5854138A | 1998-12-29 | |||
| US5102496A | 1992-04-07 | |||
| US5401356A | 1995-03-28 | |||
| US5573597A | 1996-11-12 |
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