Title:
PLASMA SIMULATION METHOD AND SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/204344
Kind Code:
A1
Abstract:
A simulation method according to the present invention comprises steps in which: a plasma device for performing a plasma process measures electron density and/or electron temperature; a continuity equation for the density of parameters related to the plasma process is calculated using the electron density and/or the electron temperature as an input value; an update is performed using a quasi-neutrality conditional expression so that the resulting value of the continuity equation satisfies a quasi-neutrality condition; and the calculation step and the update step are repeated to derive a simulation resulting value for the density of the parameters related to the plasma process.
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Inventors:
KWON DEUK CHUL (KR)
Application Number:
PCT/KR2022/006827
Publication Date:
October 26, 2023
Filing Date:
May 12, 2022
Export Citation:
Assignee:
KOREA INST OF FUSION ENERGY (KR)
International Classes:
H01J37/32
Foreign References:
JP2009174028A | 2009-08-06 | |||
KR102383416B1 | 2022-04-06 | |||
KR20200139800A | 2020-12-14 | |||
JP2015001769A | 2015-01-05 |
Other References:
CHUL DEUK, NAMSIK YOON: "The Present Status of Development of Inductively Coupled Plasma Simulator based on Fluid Model", JOURNAL OF THE KOREAN VACUUM SOCIETY, vol. 18, no. 3, 1 May 2009 (2009-05-01), pages 151 - 163, XP093098162
Attorney, Agent or Firm:
IP LAB PATENT LAW FIRM (KR)
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