Title:
PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/048543
Kind Code:
A1
Abstract:
Provided is a technology for properly forming recesses in etched films. A plasma treatment method as in the present disclosure is executed by a plasma treatment device comprising a chamber and a substrate support section provided in the chamber. The plasma treatment method includes: (a) a preparation step for preparing, on the substrate support section, a substrate that has a silicon-containing film which is an inorganic film containing silicon and a mask film on the silicon-containing film, the mask film including an opening pattern with an opening width of 30 nm or less; and (b) a step for generating plasma in the chamber and etching the silicon-containing film via the mask film to form recesses in the silicon-containing film. The (b) step includes: (b-1) a step for supplying, into the chamber, a treatment gas containing hydrogen fluoride; (b-2) a step for generating plasma from the treatment gas in the chamber; and (b-3) a step for supplying a bias signal to the substrate support section. The bias signal is a bias RF signal having an effective value of power less than 2 kW, or a bias DC signal including a sequence of negative polarity DC pulses having an effective value of voltage less than 2 kV.
Inventors:
YONEZAWA TAKAHIRO (JP)
Application Number:
PCT/JP2023/031083
Publication Date:
March 07, 2024
Filing Date:
August 29, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| WO2006030581A1 | 2006-03-23 |
Foreign References:
| JP2022002337A | 2022-01-06 | |||
| JP2021086940A | 2021-06-03 | |||
| JP2022051034A | 2022-03-31 | |||
| JP2016076620A | 2016-05-12 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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