Title:
PLASMA TREATMENT METHOD AND PLASMA TREATMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/223935
Kind Code:
A1
Abstract:
Provided is a plasma treatment method implemented in a plasma treatment device having a chamber. This method comprises: (a) a step for preparing, on a substrate support part in a chamber, a substrate having a film to be etched and a metal-containing film which is provided on the film to be etched and which has an exposed first region and an unexposed second region; (b) a step for reforming the metal-containing film by using a first plasma generated from a first treatment gas containing either a fluorine-containing gas or an oxygen-containing gas; and (c) a step for selectively removing the first region with respect to the second region in the reformed metal-containing film by using a second plasma generated from a second treatment gas.
Inventors:
YOSHIKOSHI DAISUKE (JP)
SHIMIZU YUSUKE (JP)
TAHARA SHIGERU (JP)
SHIMIZU YUSUKE (JP)
TAHARA SHIGERU (JP)
Application Number:
PCT/JP2023/017723
Publication Date:
November 23, 2023
Filing Date:
May 11, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; G03F7/004; G03F7/26
Domestic Patent References:
| WO2021158433A1 | 2021-08-12 |
Foreign References:
| JP2020084330A | 2020-06-04 | |||
| JP2004103926A | 2004-04-02 | |||
| JP2016082019A | 2016-05-16 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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