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Title:
PLASTIC SEMICONDUCTOR MATERIAL AND PREPARATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/153335
Kind Code:
A1
Abstract:
Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag 2- δX δS 1- ηY η (I), in which 0 ≤ δ < 0.5, 0 ≤ η < 0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Inventors:
SHI XUN (CN)
LIU RUIHENG (CN)
HAO FENG (CN)
WANG TUO (CN)
Application Number:
PCT/CN2018/076460
Publication Date:
August 15, 2019
Filing Date:
February 12, 2018
Export Citation:
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Assignee:
SHANGHAI INST CERAMICS CAS (CN)
International Classes:
H01L35/16; C30B29/46
Foreign References:
CN101786650A2010-07-28
CN105543971A2016-05-04
CN107235477A2017-10-10
CN105696080A2016-06-22
US20150372212A12015-12-24
US20050238568A12005-10-27
Other References:
PARK S KJACKSON T NANTHONY J E ET AL.: "High mobility solution processed 6,13-bis (triisopropyl-silylethynyl) pentacene organic thin film transistors[J", APPLIED PHYSICS LETTERS, vol. 91, no. 6, 2007, pages 063514 - 063514,3, XP012100571, DOI: 10.1063/1.2768934
MIINZENRIEDER NSALVATORE G AKINKELDEI T ET AL., INGAZNO TFTS ON A FLEXIBLE MEMBRANE TRANSFERRED TO A CURVED SURFACE WITH A RADIUS OF 2 MM[J, 2013, pages 165 - 166
See also references of EP 3751024A4
Attorney, Agent or Firm:
HANQIAO PATENT (CN)
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