PLATED MULTI-FACETED RELFECTOR

COPYRIGHT NOTICE

[0001] A portion of the disclosure of this patent document contains material

which is subject to copyright or mask work protection. The copyright or mask

work owner has no objection to the facsimile reproduction by any one of the

patent document or the patent disclosure, as it appears in the Patent and Trademark

Office patent file or records, but otherwise reserves all copyright or mask work

rights whatsoever.

CROSS-REFERENCE TO CO-PENDING APPLICATIONS

[0002] The present invention is related to the following co-pending U.S.

Patent applications: (1) U.S. Patent Application No. 11/238,991 [atty. docket

2549-0003], filed September 30, 2005, entitled "Ultra-Small Resonating Charged

Particle Beam Modulator"; (2) U.S. Patent Application No. 10/917,511 [atty.

docket 2549-0002], filed on August 13, 2004, entitled "Patterning Thin Metal Film

by Dry Reactive Ion Etching"; (3) U.S. Application No. 11/203,407 [atty. docket

2549-0040], filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small

Structures"; (4) U.S. Application No. 11/243,476 [Atty. Docket 2549-0058], filed

on October 5, 2005, entitled "Structures And Methods For Coupling Energy From

An Electromagnetic Wave"; (5) U.S. Application No. 11/243,477 [Atty. Docket

2549-0059], filed on October 5, 2005, entitled "Electron beam induced

resonance/', (6) U.S. Application No. 11/325,432 [Atty. Docket 2549-0021],

entitled "Resonant Structure-Based Display," filed on January 5, 2006; (7) U.S.

Application No. 11/325,571 [Atty. Docket 2549-0063], entitled "Switching Micro-

Resonant Structures By Modulating A Beam Of Charged Particles," filed on

January 5, 2006; (8) U.S. Application No. 11/325,534 [Atty. Docket 2549-0081],

entitled "Switching Micro-Resonant Structures Using At Least One Director,"

filed on January 5, 2006; (9) U.S. Application No. 11/350,812 [Atty. Docket 2549-

0055], entitled "Conductive Polymers for the Electroplating", filed on February

10, 2006; (10) U.S. Application No. 11/302,471 [Atty. Docket 2549-0056],

entitled "Coupled Nano-Resonating Energy Emitting Structures," filed on

December 14, 2005; and (11) U.S. Application No. 11/325,448 [Atty. Docket

2549-0060], entitled "Selectable Frequency Light Emitter", filed on January 5,

2006, which are all commonly owned with the present application, the entire

contents of each of which are incorporated herein by reference.

FIELD OF THE DISCLOSURE

[0003] This disclosure relates to multi-directional electromagnetic radiation

output devices, and particularly to ultra-small resonant structures, and arrays

formed there from, together with the formation of, in conjunction with and in

association with separately formed reflectors, positioned adjacent the ultra-small

resonant structures. As the ultra-small resonant structures are excited and produce

out put energy, light or other electromagnetic radiation (EMR), that output will be

observable in or from multiple directions.

INTRODUCTION

[0004] Electroplating is well known and is used in a variety of applications,

including the production of microelectronics, and in particular the ultra-small

resonant structures referenced herein. For example, an integrated circuit can be

electroplated with copper to fill structural recesses. In a similar way, a variety of

etching techniques can also be used to form ultra-small resonant structures. In this

regard, reference can be had to Serial No. 10/917,511 and 11/203,407, previously

noted above, and attention is directed to them for further details on each of these

techniques, consequently those details do not need to be repeated herein.

[0005] Ultra-small structures encompass a range of structure sizes

sometimes described as micro- or nano-sized. Objects with dimensions measured

in ones, tens or hundreds of microns are described as micro-sized. Objects with

dimensions measured in ones, tens or hundreds of nanometers or less are

commonly designated nano-sized. Ultra-small hereinafter refers to structures and

features ranging in size from hundreds of microns in size to ones of nanometers in

size.

[0006] The devices of the present invention produce electromagnetic

radiation by the excitation of ultra-small resonant structures. The resonant

excitation in a device according to the invention is induced by electromagnetic

interaction which is caused, e.g., by the passing of a charged particle beam in close

proximity to the device. The charged particle beam can include ions (positive or

negative), electrons, protons and the like. The beam may be produced by any

source, including, e.g., without limitation an ion gun, a tungsten filament, a

cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a

chemical ionizer, a thermal ionizer, an ion-impact ionizer.

[0007] Plating techniques, in addition to permitting the creation of smooth

walled micro structures, also permit the creation of additional, free formed or

grown structures that can have a wide variety of side wall or exterior surface

characteristics, depending upon the plating parameters. The exterior surface can

vary from smooth to very rough structures, and a multitude of degrees of each in

between. Such additional ultra small structures can be formed or created adjacent

the primary formation or array of ultra-small resonant structures so that when the

latter are excited by a beam of charged particles moving there past, such additional

ultra-small structures can act as reflectors permitting the out put from the excited

ultra-small resonant structures to be directed or view from multiple directions.

[0008] A multitude of applications exist for electromagnetic radiating

devices that can produce EMR at frequencies spanning the infrared, visible, and

ultra-violet spectrums, in multiple directions.

GLOSSARY

[0009] As used throughout this document:

[0010] The phrase "ultra-small resonant structure" snail mean any structure

of any material, type or microscopic size that by its characteristics causes electrons

to resonate at a frequency in excess of the microwave frequency.

[0011] The term "ultra-small" within the phrase "ultra-small resonant

structure" shall mean microscopic structural dimensions and shall include

so-called "micro" structures, "nano" structures, or any other very small structures

that will produce resonance at frequencies in excess of microwave frequencies.

DESCRIPTION OF PRESENTLY PREFERRED EXAMPLES OF THE INVENTION

BRIEF DESCRIPTION OF FIGURES

[0012] The invention is better understood by reading the following detailed

description with reference to the accompanying drawings in which:

[0013] Figs. 1A-1C comprise a diagrammatic showing of three steps in

forming the reflectors;

[0014] Fig. 2A-2E comprise a diagrammatic showing of forming a reflector

having an alternative shape;

[0015] Fig. 3 shows one exemplary configuration of ultra-small resonant

structures and the additional reflectors; and

[0016] Fig. 4 shows another exemplary configuration of ultra-small

resonant structures and additional reflectors.

DESCRIPTION

[0017] Figure IA is a schematic drawing of selected steps in the process of

forming ultra-small resonant structures and the additional structures that will serve

as reflectors. It should be understood that the reflectors disclosed herein are

deemed novel in their own right, and the invention contemplates the formation and

use of reflectors by themselves, as well as in combination with other structures

including the ultra-small resonant structures referenced herein and in the above

applications. Reference can be made to Application serial Nos. 11/203,407 for

details on electro plating processing techniques that can be used in the formation

of ultra-small resonant structures as well as the additional ultra-small structures

that will serve as reflectors, and those techniques will not be repeated herein.

[0018] In one presently preferred embodiment, an array of ultra-small

resonant structures can be prepared by evaporating a 0.1 to 0.3 nanometer thick

layer of nickel (Ni) onto the surface of a silicon (Si) wafer, or a like substrate, to

form a conductive layer on that substrate. The artisan will recognize that the

substrate need not be silicon. The substrate can be substantially flat and may be

either conductive or non-conductive with a conductive layer applied by other

means. In the same processing a 10 to 300 nanometer layer of silver (Ag) can then

be deposited using electron beam evaporation on top of the nickel layer.

Alternative methods of production can also be used to deposit the silver coating.

The presence of the nickel layer improves the adherence of silver to the silicon. In

an alternate embodiment, a thin carbon (C) layer may be evaporated onto the

surface instead of the nickel layers. Alternatively, the conductive layer may

comprise indium tin oxide (ITO) or comprise a conductive polymer or other

conductive materials.

[0019] The now-conductive substrate 102, with the nickel and silver

coatings thereon, is coated with a layer of photoresist as is shown in Figure IA at

110 or with an insulating layer, for example, silicon nitride (SiNx). In current

embodiments, a layer of polymethylmethacrylate (PMMA) is deposited over top

of the conductive coating. The PMMA may be diluted to produce a continuous

layer of 200 nanometers. The photoresist layer is exposed with a scanning

electron microscope (SEM) and developed to produce a pattern of the desired

device structure. The patterned substrate is positioned in an electroplating bath. A

range of alternate examples of photoresists, both negative and positive in type, can

be used to coat the conductive surface and then patterned to create the desired

structure. In Figure IA, ultra-small resonant structures are shown at 106 and 108

as having been previously formed in the patterned layer of photoresist or an

insulating layer 110. Figure IA- also shows the next step of depositing an

additional photoresist material 112 on top of and covering the existing previously

deposited photoresist or insulating layer 110 and covering the ultra-small resonant

structures 106 and 108. An opening is then formed in the material 112, down to

the opening 104 that remains in the material 110, and in subsequent processing a

free formed, or unconstrained structure 114 is in the process of being formed.

[0020] Figure IB shows the free formed, or unconstrained, structure 116

that has resulted from further electro plating processing and with the additional

photoresist material or insulating 112 removed. It should be understood that the

formation process, for these additional structures, can be controlled very precisely

so that it is possible to form any size or shape additional structures, and to control

the nature of the exterior surface of those additional structures.

[0021] Figure 1C shows the result following removal of the initial

photoresist layer 110 which leaves the ultra-small resonant structures 106 and 108

as well as the additional structure 116 formed there between. It should be noted

that this photoresist or insulating layer does not need to be removed, but can be

left in place. This additional structure 116 can have a wide variety of side wall

morphologies varying from smooth to very rough, so that a number of surfaces

thereof can be reflective surfaces, including all or portions of the sides, the top and

a variety of angled or other surfaces there between. For reflection purposes it is

preferred to have the outer surface of the additional structure 116 formed with a

very rough exterior. Light or other EMR emanating from each of the ultra-small

resonant structures 106 and 108, in the direction of the additional structure 116,

can then be reflected by the exterior of that additional structure 116 in a multiple

of directions as indicated at 120. As a result, various devices for receiving the

produced EMR, such as light and colors, which can vary from optical pick up

devices to the human eye, will be able to see the reflected energy from multiple

directions.

[0022] Figure 2A shows another embodiment where the substrate 202, on

which the Ni and Ag has been applied, has already had a layer of photoresist or

insulating material 210 deposited and an ultra-small resonant structure 206 has

been formed. An additional amount of photoresist 212 has been deposited over

the first photoresist 210 and over the ultra-small resonant structure 206. To the

right of the ultra-small resonant structure 206 an opening 211 has been made in the

photoresist layer 210, and additional photoresist material 215 has been deposited

on the right side of the substrate 202. The outer portion is shown in dotted line to

indicate that this photoresist material 215 can extend to the edge of the substrate

202. whether that edge is near the opening 211 or the outer edge of a chip or circuit

board, as shown in the solid lines, or farther away as shown by the dotted lines.

This additional photoresist material 215 is also formed with a flat, vertical interior

surface 216. Subsequent electroplating steps will then begin the process of

forming or growing an additional structure which is shown in an initial stage of

development at 214. It should be understood that the photoresist material could be

shaped in any desired manner so that some portion of the additional structure

subsequently being formed can then take on the mirror image of that shaped

structure. Thus, flat walls, curved walls, angled or angular surfaces, as well as

many other shapes or exterior surfaces, in addition to rough exterior surfaces,

could be created to accomplish a variety of desired results as a designer might

desire. For example, it might be desired to have a particular angle or shape

formed on a reflector surface to angle or focus the produced energy put in a

particular direction or way.

[0023] Figure 2B demonstrates that the additional structure 226 has been

formed and with the material 215 removed, or not since removal is not required,

the additional structure 226 has a flat exterior wall surface 228 where it was in

contact with photoresist material at the surface 216.

[0024] Figure 2C shows that all of the photoresist material has been

removed, even though it does not need to be, leaving the ultra-small resonant

structure 206 and the additional structure 226 on substrate 202. As shown by the

lines 220, light or energy produced by the ultra-small resonant structure 206 when

excited and which is directed toward the additional structure 226 will be reflected

in multiple directions by the rough exterior surface thereon.

[0025] In Figure 2D another embodiment is shown where the substrate 302,

similar to the substrates described above, has been coated with a layer of

photoresist or an insulating layer 310 and an ultra-small resonant structure 306 has

been formed. Additional photoresist material has been deposited over the whole

substrate and a hole has been formed down to the substrate and layer 310 as

indicated by the dotted line at 320. This has also formed the two opposing vertical

walls 316 and 318. The subsequent electro plating will form the structure 314

where one side has developed in an unconstrained way and is irregular while the

portion in contact with wall 318 is flat and relatively smooth, and a mirror image

of wall 318. Once the material 312 is removed, as shown in Figure 2E, the ultra-

small resonant structure 306 and the additional ultra-small structure 314 remain.

The additional ultra-small structure 314 will act as a reflector of the EMR or light

emitted by 306 as shown by the waves 322.

[0026] It should be understood that a wide variety of shapes, sizes and

styles of ultra-small resonant structures can be produced, as identified and

described in the above referenced applications, all of which are incorporated by

refrence herein. Consequently, Figure 3 and 4 show only two exemplary arrays of

ultra-small resonant structures where reflectors 116/226, like those described

above, have been formed outside of the arrays.

[0027] In Figure 3 an array 152 of a plurality of ultra-small resonant

structures 150 is shown with spacings between them 124 that extend from the

front of one ultra-small resonant structure to the front of the next adjacent

structure, and with widths 126. A beam of charged particles 130 is being directed

past the array 152 and a plurality of segmented or separately formed reflectors

116/226 are located on the side of the array 152 opposite to the side where beam

130 is passing. Consequently, light or other EMR being produced by the excited

array 152 of ultra-small resonant structures 150 will be reflected as shown at 154

in a multiple of directions by the reflectors 116/226. While a plurality of

separately formed reflectors are shown, it is also possible to form or grow one

elongated reflector as shown in dotted line at 116L.

[0028] Figure 4 shows an embodiment employing two parallel arrays of

ultra-small resonant structures, 155R and 155G, designating then as being red and

green light producing ultra-small resonant structures. A beam of charged particles

134 being generated by a source 140 and deflected by deflectors 160 as shown by

the multiple paths of that beam 134. The red and green light producing ultra-small

resonant structures 155R and 155G are being exited by beam 134 and the light

being produced is being reflected by the additional structures 116/226 located

along the arrays and on each side of the arrays opposite where beam 134 is

passing. This reflected light is shown at 170, and because the exterior surface of

the additional structures 116/226 is rough the reflected light will be visible in

multiple of directions. While the reflectors have been shown as being segmented

or spaced apart, they could also be in the form of one elongated reflector structure

175, or as several elongated reflector structures as shown at 176..

[0029] It should be understood that while a small oval structure, or the

elongated rectangles at 116L, 175 and 176, respectively, are being used in Figures

3 and 4 to represent the reflector structures, these reflectors can have a wide

variety of shapes, as noted previously above, and these representations in Figures

3 and 4 should not be viewed as being limiting in any way. Further, the invention

also comprises the reflectors themselves on a suitable substrate.

[0030] A wide range of morphologies can be achieved in forming the

additional structures to be used as reflectors, for example, by altering parameters

such as peak voltage, pulse widths, and rest times. Consequently, many exterior

surface types and forms can be produced allowing a wide range of reflector

surfaces depending upon the results desired.

[0031] Nano-resonating structures can be constructed with many types of

materials. Examples of suitable fabrication materials include silver, copper, gold,

and other high conductivity metals, and high temperature superconducting

materials. The material may be opaque or semi-transparent. In the above-

identified patent applications, ultra-small structures for producing electromagnetic

radiation are disclosed, and methods of making the same. In at least one

embodiment, the resonant structures of the present invention are made from at

least one layer of metal (e.g., silver, gold, aluminum, platinum or copper or alloys

made with such metals); however, multiple layers and non-metallic structures

(e.g., carbon nanotubes and high temperature superconductors) can be utilized, as

long as the structures are excited by the passage of a charged particle beam. The

materials making up the resonant structures may be deposited on a substrate and

then etched, electroplated, or otherwise processed to create a number of individual

resonant elements. The material-need not even be a contiguous layer, but can be a

series of resonant elements individually present on a substrate. The materials

making up the resonant elements can be produced by a variety of methods, such as

by pulsed-plating, depositing or etching. Preferred methods for doing so are

described in co-pending U.S. Application Nos. 10/917,571 and No. 11/203,407,

both of which were previously referenced above and incorporated herein by

reference.

[0032] While the invention has been described in connection with what is

presently considered to be the most practical and preferred embodiment, it is to be

understood that the invention is not to be limited to the disclosed embodiment, but

on the contrary, is intended to cover various modifications and equivalent

arrangements included within the spirit and scope of the appended claims.