Title:
POLISHING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2013/121932
Kind Code:
A1
Abstract:
This polishing composition contains: abrasive grains (A) which have an average primary particle diameter of from 15nm to 45 nm (inclusive); and abrasive grains (B) which have an average primary particle diameter that is from 0.25 to 0.8 times (inclusive) the average primary particle diameter of the abrasive grains (A). The average of the length/breadth ratios of the abrasive grains (A) is from 1.1 to 2.0 (inclusive), and the average of the length/breadth ratios of the abrasive grains (B) is from 1.1 to 2.0 (inclusive). Alternatively or additionally, the ratio of the number of abrasive grains which have a length/breadth ratio of 1.5 or more relative to the total number of abrasive grains in the polishing composition is from 20% to 80% (inclusive).
Inventors:
TSUCHIYA KOHSUKE (JP)
IDE SHOGAKU (JP)
TAKAHASHI SHUHEI (JP)
IDE SHOGAKU (JP)
TAKAHASHI SHUHEI (JP)
Application Number:
PCT/JP2013/052590
Publication Date:
August 22, 2013
Filing Date:
February 05, 2013
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B37/00
Foreign References:
| JP2006306924A | 2006-11-09 | |||
| JPH1160232A | 1999-03-02 | |||
| JP2008235481A | 2008-10-02 | |||
| JP2008270584A | 2008-11-06 | |||
| JP2002141314A | 2002-05-17 |
Attorney, Agent or Firm:
ONDA, Hironori et al. (JP)
Hironori Onda (JP)
Hironori Onda (JP)
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Claims:
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